IndiumV3, Main, Repository, bibRecord, 000184

Characterization of electrochemically deposited CuInTe2 thin films for solar cell applications

Identifieur interne : 000184 ( Main/Repository ); précédent : 000183; suivant : 000185

Characterization of electrochemically deposited CuInTe2 thin films for solar cell applications

Auteurs : RBID : Pascal:14-0084076

Descripteurs français

Pascal (Inist)
- Cellule couche mince, Cellule solaire, Electrolyte aqueux, Addition fluor, Revêtement, Electrode référence, Optimisation, Voltammétrie cyclique, Recuit, Propriété optoélectronique, Matériau amorphe, Traitement thermique, Polycristal, Mode vibration, Spectrométrie Raman, Structure chalcopyrite, Grosseur grain, Granulométrie, Composition chimique, Analyse RX dispersion énergie, Simulateur solaire, Composé ternaire, Tellurure de cuivre, Couche mince, Oxyde d'étain, Matériau revêtu, Verre, Chlorure d'argent, Oxyde d'indium, Tellurure d'indium, Microcristal, Chalcopyrite, Tellure, CuInTe2, AgCl, Electrode auxiliaire.
Wicri :
- concept : Matériau amorphe, Verre.

English descriptors

KwdEn :
- Amorphous material, Annealing, Aqueous electrolyte, Auxiliary electrode, Chalcopyrite, Chalcopyrite structure, Chemical composition, Coated material, Coatings, Copper tellurides, Cyclic voltammetry, Energy-dispersive X-ray analysis, Fluorine addition, Glass, Grain size, Grain size analysis, Heat treatment, Indium oxide, Indium tellurides, Microcrystal, Optimization, Optoelectronic properties, Polycrystal, Raman spectrometry, Reference electrode, Silver chloride, Solar cell, Solar simulators, Tellurium, Ternary compound, Thin film, Thin film cell, Tin oxide, Vibrational mode.

Abstract

CuInTe₂ (CIT) thin films have been electrochemically deposited from aqueous electrolyte onto fluorine doped tin oxide (FTO) coated glass substrates. A conventional three-electrode geometry consisting working, counter and reference electrodes was used to perform the electrochemical studies. The deposition potential, - 0.75 V with respect to Ag/AgCl was optimized by cyclic voltammetry (CV). The as-deposited as well as annealed films were characterized using range of characterization techniques to study the structural, morphological, compositional and optoelectronic properties. Amorphous CIT films have been deposited for all reported potentials, however after heat treatment the polycrystalline films with (112), (220)/(204) and (312)/(116) planes corresponds to tetragonal CIT are observed. After heat treatment the secondary peaks of Indium oxide and Indium telluride with planes (012), (222) and (311) were also observed. Identification of secondary microcrystalline phases and vibration modes of chalcopyrite were studied by using Raman spectroscopy. The most intense line observed in Raman spectra at 123 cm^-1 is due to the A, mode, which is generally observed in Raman spectra of I-III- VI₂ chalcopyrite structure. Densely packed, adherent and relatively uniform thin films of CIT are deposited for all used growth potentials. The grain size has been improved with heat treatment. Elemental compositional analysis was performed using Energy Dispersive X-ray Analysis (EDAX). Tellurium rich films are deposited for all reported potentials. The final solar cell devices fabricated at optimum deposition potential are tested using solar simulator with 1.5 AM, (100 mW cm^-2). The cell parameters obtained from J-V characteristics are, V_oc=480 mV, J_sc=20 mA/cm², FF=43% and η=4.13%. The calculated values of series resistance R_s and Ideality factor A under dark and illuminated conditions are 334/27 Ω and 1.43/1.63, respectively.

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Pascal:14-0084076

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Characterization of electrochemically deposited CuInTe<sub>2</sub>
 thin films for solar cell applications</title>
<author><name sortKey="Lakhe, Manorama" uniqKey="Lakhe M">Manorama Lakhe</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, University of Pune</s1>
<s2>Ganeshkhind, Pune 411007</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Inde</country>
<wicri:noRegion>Ganeshkhind, Pune 411007</wicri:noRegion>
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</author>
<author><name sortKey="Chaure, Nandu B" uniqKey="Chaure N">Nandu B. Chaure</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, University of Pune</s1>
<s2>Ganeshkhind, Pune 411007</s2>
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<country>Inde</country>
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<date when="2014">2014</date>
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<title level="j" type="abbreviated">Sol. energy mater. sol. cells</title>
<title level="j" type="main">Solar energy materials and solar cells</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous material</term>
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<term>Auxiliary electrode</term>
<term>Chalcopyrite</term>
<term>Chalcopyrite structure</term>
<term>Chemical composition</term>
<term>Coated material</term>
<term>Coatings</term>
<term>Copper tellurides</term>
<term>Cyclic voltammetry</term>
<term>Energy-dispersive X-ray analysis</term>
<term>Fluorine addition</term>
<term>Glass</term>
<term>Grain size</term>
<term>Grain size analysis</term>
<term>Heat treatment</term>
<term>Indium oxide</term>
<term>Indium tellurides</term>
<term>Microcrystal</term>
<term>Optimization</term>
<term>Optoelectronic properties</term>
<term>Polycrystal</term>
<term>Raman spectrometry</term>
<term>Reference electrode</term>
<term>Silver chloride</term>
<term>Solar cell</term>
<term>Solar simulators</term>
<term>Tellurium</term>
<term>Ternary compound</term>
<term>Thin film</term>
<term>Thin film cell</term>
<term>Tin oxide</term>
<term>Vibrational mode</term>
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<term>Electrolyte aqueux</term>
<term>Addition fluor</term>
<term>Revêtement</term>
<term>Electrode référence</term>
<term>Optimisation</term>
<term>Voltammétrie cyclique</term>
<term>Recuit</term>
<term>Propriété optoélectronique</term>
<term>Matériau amorphe</term>
<term>Traitement thermique</term>
<term>Polycristal</term>
<term>Mode vibration</term>
<term>Spectrométrie Raman</term>
<term>Structure chalcopyrite</term>
<term>Grosseur grain</term>
<term>Granulométrie</term>
<term>Composition chimique</term>
<term>Analyse RX dispersion énergie</term>
<term>Simulateur solaire</term>
<term>Composé ternaire</term>
<term>Tellurure de cuivre</term>
<term>Couche mince</term>
<term>Oxyde d'étain</term>
<term>Matériau revêtu</term>
<term>Verre</term>
<term>Chlorure d'argent</term>
<term>Oxyde d'indium</term>
<term>Tellurure d'indium</term>
<term>Microcristal</term>
<term>Chalcopyrite</term>
<term>Tellure</term>
<term>CuInTe2</term>
<term>AgCl</term>
<term>Electrode auxiliaire</term>
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<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Matériau amorphe</term>
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<front><div type="abstract" xml:lang="en">CuInTe<sub>2</sub>
 (CIT) thin films have been electrochemically deposited from aqueous electrolyte onto fluorine doped tin oxide (FTO) coated glass substrates. A conventional three-electrode geometry consisting working, counter and reference electrodes was used to perform the electrochemical studies. The deposition potential, - 0.75 V with respect to Ag/AgCl was optimized by cyclic voltammetry (CV). The as-deposited as well as annealed films were characterized using range of characterization techniques to study the structural, morphological, compositional and optoelectronic properties. Amorphous CIT films have been deposited for all reported potentials, however after heat treatment the polycrystalline films with (112), (220)/(204) and (312)/(116) planes corresponds to tetragonal CIT are observed. After heat treatment the secondary peaks of Indium oxide and Indium telluride with planes (012), (222) and (311) were also observed. Identification of secondary microcrystalline phases and vibration modes of chalcopyrite were studied by using Raman spectroscopy. The most intense line observed in Raman spectra at 123 cm<sup>-1</sup>
 is due to the A, mode, which is generally observed in Raman spectra of I-III- VI<sub>2</sub>
 chalcopyrite structure. Densely packed, adherent and relatively uniform thin films of CIT are deposited for all used growth potentials. The grain size has been improved with heat treatment. Elemental compositional analysis was performed using Energy Dispersive X-ray Analysis (EDAX). Tellurium rich films are deposited for all reported potentials. The final solar cell devices fabricated at optimum deposition potential are tested using solar simulator with 1.5 AM, (100 mW cm<sup>-2</sup>
). The cell parameters obtained from J-V characteristics are, V<sub>oc</sub>
=480 mV, J<sub>sc</sub>
=20 mA/cm<sup>2</sup>
, FF=43% and η=4.13%. The calculated values of series resistance R<sub>s</sub>
 and Ideality factor A under dark and illuminated conditions are 334/27 Ω and 1.43/1.63, respectively.</div>
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<fC01 i1="01" l="ENG"><s0>CuInTe<sub>2</sub>
 (CIT) thin films have been electrochemically deposited from aqueous electrolyte onto fluorine doped tin oxide (FTO) coated glass substrates. A conventional three-electrode geometry consisting working, counter and reference electrodes was used to perform the electrochemical studies. The deposition potential, - 0.75 V with respect to Ag/AgCl was optimized by cyclic voltammetry (CV). The as-deposited as well as annealed films were characterized using range of characterization techniques to study the structural, morphological, compositional and optoelectronic properties. Amorphous CIT films have been deposited for all reported potentials, however after heat treatment the polycrystalline films with (112), (220)/(204) and (312)/(116) planes corresponds to tetragonal CIT are observed. After heat treatment the secondary peaks of Indium oxide and Indium telluride with planes (012), (222) and (311) were also observed. Identification of secondary microcrystalline phases and vibration modes of chalcopyrite were studied by using Raman spectroscopy. The most intense line observed in Raman spectra at 123 cm<sup>-1</sup>
 is due to the A, mode, which is generally observed in Raman spectra of I-III- VI<sub>2</sub>
 chalcopyrite structure. Densely packed, adherent and relatively uniform thin films of CIT are deposited for all used growth potentials. The grain size has been improved with heat treatment. Elemental compositional analysis was performed using Energy Dispersive X-ray Analysis (EDAX). Tellurium rich films are deposited for all reported potentials. The final solar cell devices fabricated at optimum deposition potential are tested using solar simulator with 1.5 AM, (100 mW cm<sup>-2</sup>
). The cell parameters obtained from J-V characteristics are, V<sub>oc</sub>
=480 mV, J<sub>sc</sub>
=20 mA/cm<sup>2</sup>
, FF=43% and η=4.13%. The calculated values of series resistance R<sub>s</sub>
 and Ideality factor A under dark and illuminated conditions are 334/27 Ω and 1.43/1.63, respectively.</s0>
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<s5>03</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<fC03 i1="07" i2="X" l="SPA"><s0>Optimización</s0>
<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>10</s5>
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<fC03 i1="10" i2="X" l="SPA"><s0>Propiedad optoelectrónica</s0>
<s5>10</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>12</s5>
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<s5>15</s5>
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<fC03 i1="16" i2="X" l="FRE"><s0>Structure chalcopyrite</s0>
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<s5>18</s5>
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<s2>NK</s2>
<s5>23</s5>
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<fC03 i1="23" i2="3" l="ENG"><s0>Copper tellurides</s0>
<s2>NK</s2>
<s5>23</s5>
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<fC03 i1="24" i2="X" l="FRE"><s0>Couche mince</s0>
<s5>24</s5>
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<fC03 i1="24" i2="X" l="ENG"><s0>Thin film</s0>
<s5>24</s5>
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<fC03 i1="24" i2="X" l="SPA"><s0>Capa fina</s0>
<s5>24</s5>
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<s5>25</s5>
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<s5>25</s5>
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<s5>25</s5>
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<s5>26</s5>
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<fC03 i1="26" i2="X" l="ENG"><s0>Coated material</s0>
<s5>26</s5>
</fC03>
<fC03 i1="26" i2="X" l="SPA"><s0>Material revestido</s0>
<s5>26</s5>
</fC03>
<fC03 i1="27" i2="X" l="FRE"><s0>Verre</s0>
<s5>27</s5>
</fC03>
<fC03 i1="27" i2="X" l="ENG"><s0>Glass</s0>
<s5>27</s5>
</fC03>
<fC03 i1="27" i2="X" l="SPA"><s0>Vidrio</s0>
<s5>27</s5>
</fC03>
<fC03 i1="28" i2="X" l="FRE"><s0>Chlorure d'argent</s0>
<s5>28</s5>
</fC03>
<fC03 i1="28" i2="X" l="ENG"><s0>Silver chloride</s0>
<s5>28</s5>
</fC03>
<fC03 i1="28" i2="X" l="SPA"><s0>Plata cloruro</s0>
<s5>28</s5>
</fC03>
<fC03 i1="29" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>29</s5>
</fC03>
<fC03 i1="29" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>29</s5>
</fC03>
<fC03 i1="29" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>29</s5>
</fC03>
<fC03 i1="30" i2="3" l="FRE"><s0>Tellurure d'indium</s0>
<s2>NK</s2>
<s5>30</s5>
</fC03>
<fC03 i1="30" i2="3" l="ENG"><s0>Indium tellurides</s0>
<s2>NK</s2>
<s5>30</s5>
</fC03>
<fC03 i1="31" i2="X" l="FRE"><s0>Microcristal</s0>
<s5>31</s5>
</fC03>
<fC03 i1="31" i2="X" l="ENG"><s0>Microcrystal</s0>
<s5>31</s5>
</fC03>
<fC03 i1="31" i2="X" l="SPA"><s0>Microcristal</s0>
<s5>31</s5>
</fC03>
<fC03 i1="32" i2="X" l="FRE"><s0>Chalcopyrite</s0>
<s5>32</s5>
</fC03>
<fC03 i1="32" i2="X" l="ENG"><s0>Chalcopyrite</s0>
<s5>32</s5>
</fC03>
<fC03 i1="32" i2="X" l="SPA"><s0>Calcopirita</s0>
<s5>32</s5>
</fC03>
<fC03 i1="33" i2="X" l="FRE"><s0>Tellure</s0>
<s2>NC</s2>
<s5>33</s5>
</fC03>
<fC03 i1="33" i2="X" l="ENG"><s0>Tellurium</s0>
<s2>NC</s2>
<s5>33</s5>
</fC03>
<fC03 i1="33" i2="X" l="SPA"><s0>Teluro</s0>
<s2>NC</s2>
<s5>33</s5>
</fC03>
<fC03 i1="34" i2="X" l="FRE"><s0>CuInTe2</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="35" i2="X" l="FRE"><s0>AgCl</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="36" i2="X" l="FRE"><s0>Electrode auxiliaire</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="36" i2="X" l="ENG"><s0>Auxiliary electrode</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>111</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |texte=   Characterization of electrochemically deposited CuInTe2 thin films for solar cell applications
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Characterization of electrochemically deposited CuInTe2 thin films for solar cell applications

Characterization of electrochemically deposited CuInTe2 thin films for solar cell applications

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